반도체 장치 및 그 제작 방법

Semiconductor device and method for manufacturing the same

Abstract

PURPOSE: A semiconductor apparatus and a manufacturing method thereof are provided to improve the adhesion between a substrate and an insulation layer by forming the gate insulation layer as the nitride silicon layer or the nitride oxidization silicon layer. CONSTITUTION: A gate electrode layer(101) is formed on a substrate(100). A gate insulation layer(102) is formed on the gate electrode layer. An oxide semiconductor layer(103) containing the oxidation silicon is formed on the gate isolation layer. A source electrode layer or drain electrode layers(105a, 105b) is overlapped with one part of the oxide semiconductor layer.
본 발명은 산화물 반도체층이 사용되며 전기 특성이 뛰어난 박막 트랜지스터가 구비된 반도체 장치가 제공되는 것이 과제의 하나다. 절연 표면 위에 게이트 전극과, 산화실리콘을 함유한 산화물 반도체층과, 게이트 전극과 산화물 반도체층 사이에 절연층과, 산화실리콘을 함유한 산화물 반도체층과 소스 전극층 또는 드레인 전극층 사이에 소스 영역 또는 드레인 영역을 갖고, 소스 영역 또는 드레인 영역에는 축퇴된 산화물 반도체 재료 또는 산질화물 재료가 사용된다.

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